Japanese car maker Mazda and Rohm are jointly developing gallium nitride (GaN) power semiconductors for automotive applications for a demonstrator later this year.
The two companies have been working on the joint development of inverters using silicon carbide (SiC) power semiconductors since 2022. Now they are working on the development of automotive components using GaN. With higher frequency operation than SiC, GaN can reduce power conversion losses and contribute to the miniaturization of components with smaller magnetic components.
They aim to show a demonstration model in 2025, with practical implementation in 2027.
- Japanese push for chiplets by 2028
- Rohm taps TSMC for volume GaN production
- Rohm teams for GaN TOLL packaging
“As the shift towards electrification accelerates, we are delighted to collaborate with Rohm to create a new value chain that directly connects semiconductor devices and cars,” said Ichiro Hirose, Director, Senior Managing Executive Officer and CTO of Mazda.
This is part of an industry move for the automotive brands to work directly with semiconductor companies rather than relying on Tier 1 and Tier 2 suppliers. This was highlighted in the pandemic with the chip shortage shutting down car production.
Brands such as General Motors and Volkswagen have been building direct relationship with chip suppliers, even going as far to develop their own chips.
Leave a comment